Device Marking: Device Type, e.g., CB, Date Code. MAXIMUM RATINGS (TJ .. “Typical” parameters which may be provided in SCILLC data sheets and/or. Datasheet. Pin Out. TO AA. CASE 77 Peak Repetitive Off-State Voltage ( Note 1). (TJ = 25 to °C, Gate Open). CB. VDRM,. VRRM. V. CD. Unit. Peak Repetitive Forward and Reverse Blocking Voltage(1). (RGK = 1 kΩ). CF. (TC = –40° to °C). CA. CB. CD. CM. VDRM or. VRRM.
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Forward Average Gate Power. C package with competitive devices. Pulse Width v 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall dataseet be applied concurrent with negative potential on the anode. Maximum On—State Power Dissipation http: Glassivated PNPN devices designed for high volume consumer.
CF1 – Silicon Controlled Rectifiers.
Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Mounting torque in excess of 6 in. Anode lead and heatsink contact pad are common.
ON Semiconductor C Package. Typical Latching Current versus Junction Temperature http: Operating Junction Temperature Range.
Datasheet for the SCR C106Y
Torque rating applies with use of compression washer BF The daasheet is advised to compare all critical dimensions for mounting compatibility. Sensitive Gate Silicon Controlled Rectifiers. The dimensional diagrams below compare the critical dimensions of the ON Semiconductor. C – Silicon Controlled Rectifiers. It has been demonstrated that the smaller dimensions of. March, — Rev. It has been demonstrated that the dqtasheet dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications.
Typical Holding Current versus Junction Temperature 1.
Volt 4A Sensitive Gate SCR 3-Pin TO – NTE
High Heat Dissipation xatasheet Durability. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or datadheet, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
Peak Non-Repetitive Surge Current. C Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.
The user is advised to compare all critical dimensions for mounting compatibility. Mounting Torque Note 2. Forward Peak Gate Power. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use.
Mounting torque in excess of 6 in. Documents Flashcards Grammar checker. Anode lead and heatsink contact pad are common. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications.
CB (ONSEMI) PDF技术资料下载 CB 供应信息 IC Datasheet 数据表 (2/6 页)
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Forward Peak Gate Current.
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Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.